StarPower has introduced two three-phase IGBT modules for EVs, designed to save space, thanks to their compact design with six IGBTs in one housing.

A common feature of the modules is that they are fitted with trench IGBTs in an arrangement of six per housing with an integrated temperature sensor.

The trench semiconductor technology guarantees particularly low switching losses, high short-circuit protection and superior performance characteristics. Versions are available for 750 V/660 A (model GD660HTA75P7H) and for 1200 V/260 A (model GD260HTA120P7H).

The topology arrangement of a three-phase bridge ensures a compact inverter design for main and auxiliary drive applications. Each IGBT is equipped with an integrated, freewheeling diode.

The housings are optimised for low inductance. The GD660HTA75P7H model uses an electrically insulated, all-copper base plate in PINFIN technology and silicon nitride for optimum cooling.

The high-voltage GD260HTA120P7H model uses a base plate in DBC (direct bonded copper) technology with a PINFIN structure for cooling.