Infineon has created the first 2000 V Schottky diode for high-voltage (HV) DC link designs, writes Nick Flaherty.

The CoolSiC 2000 V G5 is the first discrete silicon-carbide diode with this breakdown voltage, making it suitable for DC links up to 1500 V with current ratings from 10-80 A. This makes it ideal for higher DC-link voltage applications.

The diode comes in a TO-247PLUS-4-HCC package, with 14 mm creepage and 5.4 mm clearance. This, together with a current rating up to 80 A, enables a higher power density, enabling developers to achieve higher levels with only half the component count of 1200 V solutions. This enables a smooth transition between multi-level and two-level topologies.

Infineon plans to use the TO-247-2 package for smaller designs. The CoolSiC Schottky diode 2000 V G5 uses Infineon’s .XT interconnection technology that leads to significantly lower thermal resistance and impedance, enabling better heat management. 

The .XT interconnect uses a diffusion soldering process developed by Infineon that minimises connection voids and reduces the thickness of the die attach layer. The technology includes copper-wire bonding, silver sintering and soldering with strengthened tin alloys.

The diode was robust against humidity in HV-H3TRB reliability tests. The diodes exhibit neither reverse-recovery current nor forward recovery, and they feature a low forward voltage, ensuring enhanced system performance.

The 2000 V diode family is matched to the CoolSiC MOSFETs 2000 V in the TO-247Plus-4 HCC pack; a matching gate-driver family is for the CoolSiC MOSFETs.

See our Tech Focus on OBCs (page 66)